www.irf.com 1 9/21/04 IRF7495PBF hexfet power mosfet high frequency dc-dc converters lead-free benefits applications low gate to drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current notes through are on page 8 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a v dss r ds(on) max i d 100v 22m @v gs = 10v 7.3a absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation w linear derating factor w/c dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 c/w r ja junction-to-ambient (pcb mount) ??? 50 7.3 -55 to + 150 0.02 2.5 max. 7.3 4.6 58 100 20
IRF7495PBF 2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 100 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.10 ??? v/c r ds(on) static drain-to-source on-resistance ??? 18 22 m ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic @ t j = 25c (unless otherwise specified) parameter min. typ. max. units gfs forward transconductance 11 ??? ??? s q g total gate charge ??? 34 51 q gs gate-to-source charge ??? 6.3 ??? nc q gd gate-to-drain ("miller") charge ??? 11.7 ??? t d(on) turn-on delay time ??? 8.7 ??? t r rise time ??? 13 ??? t d(off) turn-off delay time ??? 10 ??? ns t f fall time ??? 36 ??? c iss input capacitance ??? 1530 ??? c oss output capacitance ??? 250 ??? c rss reverse transfer capacitance ??? 110 ??? pf c oss output capacitance ??? 980 ??? c oss output capacitance ??? 160 ??? c oss eff. effective output capacitance ??? 240 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 2.3 (body diode) a i sm pulsed source current ??? ??? 58 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 42 ??? ns q rr reverse recovery charge ??? 73 ??? nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) typ. ??? ??? conditions v ds = 25v, i d = 4.4a i d = 4.4a v ds = 50v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz 180 4.4 mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 4.4a, v gs = 0v t j = 25c, i f = 4.4a, v dd = 25v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 4.4a v ds = v gs , i d = 250a v ds = 100v, v gs = 0v v ds = 80v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v max. v gs = 0v, v ds = 1.0v, ? = 1.0mh z v gs = 0v, v ds = 80v, ? = 1.0mhz v gs = 0v, v ds = 0v to 80v v gs = 10v v dd = 50v i d = 4.4a r g = 6.2 ?
IRF7495PBF www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 2 3 4 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 50v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 7.3a v gs = 10v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20s pulse width tj = 150c 4.5v vgs top 15v 10v 8.0v 5.0v bottom 4.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 5.0v bottom 4.5v 20s pulse width tj = 25c 4.5v
IRF7495PBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 10203040 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 4.4a 0.0 0.2 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.01 0.10 1.00 10.00 100.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec t a = 25c tj = 150c single pulse
IRF7495PBF www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 6 7 8 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response )
IRF7495PBF 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 1k vc c dut 0 l q g q gs q gd v g charge 0 10203040506070 i d , drain current (a) 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 10v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.0a 3.5a bottom 4.4a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 v gs, gate -to -source voltage (v) 10 20 30 40 50 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 4.4a
IRF7495PBF www.irf.com 7 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c ab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l ine conf or ms t o je de c ou t l ine ms -012aa. not e s : 1. dime ns ioning & t ole rancing pe r as me y14.5m-1994. 2. cont rolling dime ns ion: millime t e r 3. dimens ions are s hown in millimet ers [inches]. 5 dime ns ion does not incl ude mold prot rus ions . 6 dime ns ion does not incl ude mold prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for s oldering t o a s ubs t rat e. mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.070 ] dat e code (yww) xxxx int ernat ional rect ifier logo f7101 y = last digit of the year part number lot code ww = we e k example: this is an irf7101 (mosfet) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code
IRF7495PBF 8 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 19mh r g = 25 ? , i as = 4.4a. when mounted on 1 inch square copper board, t 10 sec. pulse width 400s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . i sd 5.8a, di/dt 250a/s, v dd v (br)dss , t j 150c. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/04
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